Thermophysical characteristics of an electron gas of silicon in the region of phase transformations
The results of modeling the equilibrium thermophysical characteristics of electron silicon in the melting region are presented. In view of the limited possibilities of the experimental approach in determining the properties of the electron gas of silicon, this paper uses the theoretical approach and the possibilities of mathematical modeling. The characteristics of the electronic subsystem are calculated from thermodynamic and kinetic representations, using the technique of Fermi-Dirac integrals.
Within the framework of quantum statistics, the equilibrium thermophysical properties of an electron gas of silicon with intrinsic conductivity in an arbitrary degeneracy range are determined in the temperature range from 300 K to 2000 K. In the simulation, the influence of narrowing of the forbidden band. The results of the calculations are compared with the experimental data.
silicon, carrier concentration, quantum and classical statistics, narrowing of the band gap, thermophysical properties
Publication language:russian, страниц:27
Mathematical modelling in actual problems of science and technics