In the paper the methodic of structural diagnostic of surfaces with developed relief based on the using of correlation and wavelet analysises is presented. 4 development types obtained of method of ion implantation of Co⁺ in near-surface region of silicon are considered for different doses of irradiation. Developed methodic is use as these development types. On basis of received results conclusions about regularity of characteristic structures are made for each development types.

Mathematical modelling in actual problems of science and technics