Formation of Dissipative Structures in Boron-Implanted Silicon.
Abstract:
Starting from the principles of the general theory of self- organization, the formation of dissipative structures as found experimentally in annealed samples of boron-implanted silicon is explained. A qualitative 'reaction-diffusion' model is developed which reproduces the formation of spatially ordered boron dopant distribution in the form of equidistant maxima. Perspectives of more exact quantitative models describing the extraordinary evolution of boron dopant in silicon are discussed.
Publication language:russian
Research direction:
Mathematical modelling in actual problems of science and technics
