Mathematical model of radiation heating of microelectronic device
Abstract:
Radiation heating of a semiconductor crystal is considered. A model is constructed for transferring energy to the crystal by excess charge carriers, which are formed during the scattering of ionizing radiation. The energy distribution lost by the incident radiation in the crystal is calculated between the conduction electrons and phonons of the crystal lattice.
Keywords:
ionizing radiation, charge carrier, phonon
Publication language:russian, pages:12
Research direction:
Mathematical modelling in actual problems of science and technics
