Authors:Ivanov A. V., Zipunova E.V., Knizhnik A.A., Popkov A.F.
The anisotropy model on a compensated interface of cubic ferromagnet-antiferromagnet with structure Cu3Au (L12)
Abstract:
Magnetoresistive memory (MRAM) is potentially capable to replace most of the various types of modern semiconductor memory.
The key element of the MRAM cell is an antiferromagnetic layer with a FCC lattice that fixes the magnetization of the adjacent ferromagnetic layer. In this paper we study the mechanism of the appearance of the exchange anisotropy on the compensated interface of an antiferromagnet and a ferromagnet, there is constructed a multilayered micro-magnetic model of an antiferromagnet. It is shown that the direction of the anisotropy axis is determined by one of the eight states of the antiferromagnet. The traditional single-layer macro-spin model of an antiferromagnet gives incorrect results. There is proposed an effective two-layer model of an antiferromagnet with a 'heavy' inner layer.
Keywords:
MRAM, numerical simulation of magnets
Publication language:russian, pages:31
Research direction:
Mathematical modelling in actual problems of science and technics
